Superlattice HfO2-ZrO2 Based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 Cycles for Multibit NVM

C. -Y. Liao,Z. -F. Lou,C. -Y. Lin,A. Senapati, R. Karmakar,K. -Y. Hsiang,Z. -X. Li,W. -C. Ray,J. -Y. Lee, P. -H. Chen,F. -S. Chang, H. -H. Tseng,C. -C. Wang,J. -H. Tsai,Y. -T. Tang,S. T. Chang,C. W. Liu,S. Maikap,M. H. Lee

2022 International Electron Devices Meeting (IEDM)（2022）

引用 14|浏览4

关键词

ferro-stack FeFETs,geometrical phase analysis,HfO2-ZrO2/int,HfZrO2/int,homogeneous-domain merits ultra-low error,low phase fraction ratio,monoclinic-phase,multibit NVM,nanoscale 3D FeFETs,orthorhombic-phase,size 5.0 nm,SL-HfZrO,SL-HZO,sufficient ferroelectric-domain,superlattice technique,ultra-low error rate,voltage 4.0 V

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