Extremely High Performance, High Density 20nm Self-Selecting Cross-Point Memory for Compute Express Link
2022 International Electron Devices Meeting (IEDM)（2022）
关键词
AR,aspect ratio,bipolar write operations,cell stack materials engineering,compute express link,high density 20nm self-selecting cross-point memory,high density array operation,memory-selector duality,PCM,phase change material,power consumption,read window margin,RWM,SSM
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