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Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation Between Adjacent Source-Drain Structures

H. Mertens,R. Ritzenthaler,Y. Oniki,P. Puttarame Gowda,G. Mannaert,F. Sebaai,A. Hikavyy,E. Rosseel,E. Dupuy,A. Peter,K. Vandersmissen,D. Radisic,B. Briggs,D. Batuk,J. Geypen, G. Martinez-Alanis,F. Seidel,O. Richard,B. T. Chan,J. Mitard,E. Dentoni Litta,N. Horiguchi

2022 International Electron Devices Meeting (IEDM)（2022）

Cited 13|Views1
Key words
active area patterning hard mask engineering,adjacent source-drain structures,BDI,bottom dielectric isolation,dielectric film,epitaxial layer,forksheet dielectric wall,forksheet FET,forksheet field-effect transistors,functional unipolar forksheet devices,gate cut,SiGe/int,size 10.0 nm,wall height,wall losses,wall widths
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