Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction

The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20oC and 90oC, respectively. Keywords: vertical-cavity surface-emitting laser, wafer fusion, tunnel junction, superlattice, internal optical loss.