28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses

Sourav De,Yannick Raffel,Sunanda Thunder,Franz Müller,Maximilian Lederer, Thomas Kaempfe

crossref（2022）

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摘要

This paper presents 28 nm high-k-metal gate (HKMG) based ferroelectric field effect transistor (FeFET) devices fabricated on 300mm wafers at GlobalFoundries’. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of data-retention capability at 85°C.

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