Near and Mid-Infrared Light-Emitting Diodes Based on Solution-Processable Semiconductors

We will discuss recent work aimed at developing efficient infrared light-emitting diodes (LEDs) based on organic semiconductors and black phosphorus (BP). We have realized a fluorescent organic light-emitting diode emitting at λ = 840 nm, with a maximum EQE of 3.8%, which is a record for this class of devices. We have also realized the first BP LED, which emits at λ = 3.7 µm, with an IQE of 1%.