Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

2022 28th International Semiconductor Laser Conference (ISLC)(2022)

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摘要
We investigate the temperature-dependence of modal gain for type-II (GaIn)As/Ga(AsSb) “W”-laser structures operating around the O-band. Measurements show their potential to control the temperature dependence of the gain due to carrier-induced band bending effects. This is of interest to semiconductor laser and optical amplifier applications.
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关键词
optical gain,temperature-dependence,gaas-based
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