Simulation and design of a burst mode 20Mfps global shutter high conversion gain CMOS image sensor in a standard 180nm CMOS image sensor process using sequential transfer gates.

A sequential transfer-gate and photodiode optimization method for CMOS Image sensors are described in this paper, which enables the design of large-scale ultra-high-speed burst mode CMOS Image sensors in a low-cost standard CMOS Image sensor process without the need for process customization or advanced process. The sequential transfer gates also show a clear advantage in minimizing the floating diffusion capacitance and improving image sensor conversion gain in large-scale pixels.