On-Wafer Measurement of a D-Band Device

This paper presents on-wafer measurement methods for the scattering coefficient, power, and noise figure of a semiconductor circuit in the D band (110∼170 GHz). The calibration algorithms for the S-parameter measurement were compared, and the effect of the total coplanar waveguide (CPW) width of the commercial calibration standards was examined. In the power measurement, the accuracy of the measurement value was improved through precision path loss evaluation. In addition, in the noise figure measurement, the system configuration and calibration method are presented, and the path loss compensation is examined. The detailed configuration and considerations for each measurement system are presented, and the measured results of the designed low-noise amplifier (LNA) chip are presented.