Modulating thermally activated hole transport in a multi-channel silicon nanowire transistor by single acceptor-induced traps

We have studied the thermally activated hole transport modulated by single acceptor-induced traps in a p-type multi-channel silicon nanowire transistor. Activation energies are extracted from the temperature-dependent conductance of activated holes by thermionic emission above the barriers, which can be varied linearly with a slope of 0.022 eV/V by the gate voltages. We find that the gate actions remain constant inside the channel with the single acceptor-induced traps and double spacer barriers. The constant activation energy of 7.5 meV for the trap level is consistent with the binding energy of the A ⁺ state of a boron acceptor.