A di/dt Triggered Self-Powered Unidirectional DC Circuit Breaker for both GaN and SiC platform for 400 V DC Applications

2022 IEEE Energy Conversion Congress and Exposition (ECCE)(2022)

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摘要
A novel di/dt triggered unidirectional self-powered DC circuit breaker is designed using either a normally-ON GaN HEMT or SiC JFET, with a low response time. Response time to fault is significantly reduced by eliminating PWM startup delay in the protection gate driver of GaN HEMT and SiC JFET. The circuit breaker prototype was built and experimentally demonstrated the interruption of fault currents up to 50 A at 400 V DC with response time as low as 600 ns.
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关键词
Gallium Nitride, GaN, HEMT, SiC, JFET, Self-powered, DC, Circuit Breaker, Ultra-low response time
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