The Electrical-thermal Coupling Modeling about Large Periphery RF GaN HEMT on Si Employing by Through Wafer Via Structure
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)（2022）
关键词
electrical-thermal coupling modeling,GaN/int,heat dissipation,heat source region,HEMT RF power devices,high density through-via technology,high resistance silicon,low temperature heat sink,maximum junction temperature,multigate finger device,nonuniform thermal distribution,periphery RF HEMT,self-heating effect,Si/sur,size 8.1 mm,thermal near junction,thermal resistance,thermal simulation,through-via structure,total gate width,traditional structure devices,uniform gate device
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要