0.1V Low Power Bandgap Reference For RRAM Storage Applications

Yongkang Han, Wenjun Zhang,Yue Cao,Haijun Jiang,Ruixi Zhou,Xiaoxin Xu,Jianguo Yang

2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)（2022）

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摘要

This article proposes a bandgap for RRAM storage, which can work at a minimum of 0.7V power supply and provide a reference voltage of 0.1V. The circuit uses sub threshold technology to reduce the power supply voltage, symmetrical OTA structure to improve the PVT characteristics, and cascode technology to improve the accuracy of reference current. The temperature coefficient (TC) of 1.4ppm/°C was obtained under the 0.18um process from 0 to 100°C, and 1.5uA current was finally consumed under the 0.9V power supply voltage.

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关键词

cascode technology,current 1.5 muA,low power bandgap reference,power supply voltage,PVT characteristics,reference current,reference voltage,RRAM storage applications,size 0.18 mum,symmetrical OTA structure,temperature 0.0 degC to 100.0 degC,threshold technology,voltage 0.1 V,voltage 0.7 V,voltage 0.9 V

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