Bias-Free Operation of Type-II GaInAsSb/InP High Speed Uni-Traveling Carrier Photodiodes

We report the first bias-free operation of top-illuminated uniform Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes (UTC-PDs) for $\lambda =1.55\mu$m. A record-high zero-bias bandwidth of 78 GHz was achieved. The device includes a 100 nm uniform Ga 0.81 In 0.19 As 0.65 Sb 0.35 absorber and 225 nm uniform InP collector layer.