The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

Adrian Ildefonso,Joel M. Hales,Ani Khachatrian,Jeffrey W. Teng,George N. Tzintzarov,Delgermaa Nergui,Brett L. Ringel,Uppili Raghunathan,Vibhor Jain,John D. Cressler,Dale McMorrow

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）

Cited 1|Views44

Key words

Silicon germanium,Carbon,Doping,Transient analysis,Silicon,Performance evaluation,Boron,Bulk traps,pulsed-laser testing,SiGe heterojunction bipolar transistors (HBTs),single-event effects,single-event transients (SETs)

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