Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹

Abstract We demonstrate high-performance normally-off multi-fin β-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 μm by using a nitrogen-doped β-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of ≥1.3 V, a specific on-resistance of 2.9 mΩ·cm2 and a current density of 760 A cm−2 at a gate voltage of +10 V. The estimated MOS channel field effect mobility was ∼100 cm2 V−1 s−1. These findings offer important insights on the development of Ga2O3 MOSFETs and show the great promise of Ga2O3 vertical power devices.