On the switching mechanism and optimisation of ion irradiation enabled 2D MoS2 memristors
Nanoscale（2023）
摘要
Kinetic Monte Carlo simulations reveals non-filamentary switching in 2D planar memristors, and provides optimization strategies for variability, resistance ratio, and scalability.
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关键词
optimisation irradiation,2d mos<sub>2</sub>,switching mechanism
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