Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz

This study analyses the effect of test structure design for on-wafer TRL calibration of 28nm FD-SOI MOSFETs upto 110 GHz. Two different calibration kits are designed with and without continuous ground plane and their effect on the extracted transistor parameters are studied in terms of the measurement discontinuities encountered. Measurement results are discussed in conjunction with electromagnetic (EM) co-simulations, which use the small-signal equivalent circuit model of transistor along with the 3D models of the probes and test structures. The electric field coupling between the probes is visualised in each case and conclusions are drawn.