Enabling 3D NAND Trench Cells for Scaled Flash Memories
2023 IEEE International Memory Workshop (IMW)(2023)
摘要
3D Trench cells with a vertical flat channel have been proposed to increase the cell density over 3D NAND gate-all-around (GAA). In this work, we investigate the device characteristics of Trench cells. In absence of curvature, Trench cells exhibit inferior program and erase in comparison to a GAA reference. However, the memory window of Trench cells is significantly improved with channel width scaling, gate stack engineering and metal gate integration. This study also provides a basis for design and fabrication of future ultradense 3D NAND memories based on the Trench architecture.
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关键词
3D NAND, Flash, XY-scaling, GAA, Trench, Memory
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