Ge-on-Si APD in Commercial Foundry Process for Near-Infrared Sensing

2023 IEEE Silicon Photonics Conference (SiPhotonics)(2023)

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摘要
We demonstrate a method for improving Ge-on-Si avalanche photodiode (APD) sensitivity by varying the geometry of the charge and multiplication regions to achieve lower noise current. The APD's, fabricated in a commercial silicon photonic process, demonstrate an improved signal-to-noise ratio (SNR) at 940nm wavelength.
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