Synthesis and characterizations of polystyrene materials with low dielectric constant and low dielectric loss at high frequency

In this article, a facile and efficient approach to the modification of polystyrene (PS) materials with low dielectric properties at high frequency is reported. A series of N-acetoxy amide (AA)-containing polystyrenes (PSAAs) synthesized by free-radical polymerization can be transformed into NCO-containing polymers (rPSAAs) via Lossen rearrangement reaction of the AA group. The modified PS materials were then obtained by reacting the rPSAAs with hydroxyl-terminated poly(phenylene oxide) (PPOD), polybutadiene, and amino-terminated polysiloxane, respectively. The thermal stability, mechanical, and dielectric properties of PPOD-modified PS materials were improved with increase of PPOD content. The PPOD (20 wt%)-modified PS had a dielectric constant of 2.22 and dissipation factor of 1.65 x 10(-3) at 10 GHz. This work provides an easy and effective method to prepare high performance modified PS materials by introducing poly(phenylene oxide), which could meet the requirement of new-generation communication technology.