Atomic layer deposition of MoO_x thin films using Mo(ⁱPrCp)₂H₂ and O₃

This work studied the growth of molybdenum oxide thin films with thermal atomic layer deposition (ALD) using Mo((PrCp)-Pr-1)(2)H-2 and O-3 as precursors. Growth parameters were determined by varying growth temperature and precursor dose times. ALD growth was exhibited in a temperature range of 100-200 degrees C. The growth per cycle ranged from 1.3 to 1.7 angstrom/cycle with a standard uniformity parameter of <5%. Attempts to grow films using H2O as an oxygen source showed no significant growth. Film properties were measured using spectroscopic ellipsometry, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and infrared spectroscopy.