Planar Hall effect in the quasi-two-dimensional topological semimetal candidate In_0.93TaSe₂

Here, we report the systematic study on the planar transport properties of the quasi-two-dimensional (quasi-2D) topological nodal-line semimetal candidate In0.93TaSe2. When rotating magnetic field in the plane, the anisotropic longitudinal resistance and planar Hall resistance are clearly observed and can be well described by the theoretical formulation of the planar Hall effect (PHE). Further analysis demonstrates that the anisotropic orbital resistance rather than the topological-nontrivial chiral anomaly plays a dominant role on the PHE in In0.93TaSe2. Our study provides another platform for understanding the mechanism of PHE, which may also be valuable for future planar Hall sensors based on quasi-2D materials.