Magnetoelectric coupling effect in Ga3+-doped Ca3CoMn1-xGaxO6 compounds

The introduction of defects is the key method to control the multiferroic properties of one-dimensional frustration Ca3CoMnO6. In this work, we synthesized a series of Ga3+ doped Ca3CoMn1-xGaxO6 (x = 0, 0.05, 0.1, 0.2) compounds. Their crystallographic structure, magnetism as well as the dielectric properties were characterized. The XRD patterns verify the rhombohedral structure of all the samples. The Ga3+ ions have obvious inhibitory effect on the magnetic short-range order. With the substitution of Mn4+ by Ga3+, the polar nanodomains are inhibited and the diffusion index gamma becomes lower. The same sign of Delta epsilon and Delta tan delta in magnetic field dependent permittivity suggests that the magnetoelectric coupling effect in Ca3CoMn1-xGaxO6 is intrinsic. For the Ca3CoMn1-xGaxO6 system, the freezing process is primarily dominated by the coupling of the polar nanodomains. (c) 2023 Elsevier B.V. All rights reserved.