Anomalous Hall effect and topological Hall effect in the noncollinear antiferromagnet V0.3NbS2

The recent discoveries of large anomalous Hall effect (AHE) in antiferromagnets (AFMs) have brought intense study in theories and experiments. Special attention has also been given to the topic of topological Hall effect (THE). Both of them provide a good platform for understanding the interplay between magnetism and transport characteristics. Here, we report the magnetic and electrical transport properties of a layered AFM V0.3NbS2 single crystal. It orders antiferromagnetically below TN1 similar to 53 K and exhibits weak magnetic hysteresis loop with a tiny net magnetization (approximate to 16 m mu B/V) along the c axis as a result of canted antiferromagnetic configuration. Of particular interest is the realization of AHE in such AFMs with a near-perfect cancellation of moment, which probably originates from the contribution of nonzero Berry curvature. THE is detected at low temperatures, which acts as the probe of spin reorientation in the magnetization process induced by field. The magnetoresistance shows a weak irreversible behavior near zero field, consistent with the hysteresis loop in magnetization and Hall resistivity. It presents a negative value below 7 T, which is ascribed to the spin-dependent scattering. The observation of anomalous transport in V0.3NbS2 serves as a platform for studying AHE within AFMs.