An Efficient External Memory Test Solution: Case Study for HPC Application
2023 IEEE 41st VLSI Test Symposium (VTS)(2023)
摘要
An increasing amount of data are being stored and processed by data centers every day for various commercial and industrial applications. For such large-scale systems dealing with enormous volumes of data, utilization of Dynamic Random-Access Memories (DRAM), integrated into horizontal or vertical stacks, has been proven to be the ideal solution in terms of area vs performance. At-speed test and repair in these stacks of DRAM memories requires complex solutions given the various lifecycle stages the memories go through. In this paper an efficient Built-In Self-Test (BIST) concept is proposed, focusing on both the in-system and production aspects of the test solution. It is demonstrated for a real-life High-Performance Computing (HPC) application.
更多查看译文
关键词
External memory test, BIST, DRAM, HPC
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要