An Efficient External Memory Test Solution: Case Study for HPC Application

2023 IEEE 41st VLSI Test Symposium (VTS)(2023)

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摘要
An increasing amount of data are being stored and processed by data centers every day for various commercial and industrial applications. For such large-scale systems dealing with enormous volumes of data, utilization of Dynamic Random-Access Memories (DRAM), integrated into horizontal or vertical stacks, has been proven to be the ideal solution in terms of area vs performance. At-speed test and repair in these stacks of DRAM memories requires complex solutions given the various lifecycle stages the memories go through. In this paper an efficient Built-In Self-Test (BIST) concept is proposed, focusing on both the in-system and production aspects of the test solution. It is demonstrated for a real-life High-Performance Computing (HPC) application.
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关键词
External memory test, BIST, DRAM, HPC
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