TID Response of an Analog In-Memory Neural Network Accelerator.

IRPS(2023)

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摘要
A vector-matrix multiply (VMM) characterization chip was designed and fabricated in 350nm CMOS, including pulsers and a 10-bit analog to digital converter. The response of total ionizing dose (TID) was assessed using gamma radiation from a Cobalt-60 source. Inference was performed in situ during irradiation and VMMs computed by the accelerator were measured at increasing TID levels. Experimental results were used to create a circuit model, which was enabled a neural network accuracy simulation with CrossSim. Accuracy degradation on the CIFAR-10 task was a function of network architecture and was significantly reduced following >150 krad exposure.
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关键词
10-bit analog,350nm CMOS,Analog In-Memory Neural Network Accelerator,CIFAR-10 task,Cobalt-60 source,gamma radiation,including pulsers,increasing TID levels,network architecture,neural network accuracy simulation,size 350.0 nm,TID response,total ionizing dose,vector-matrix multiply characterization chip,VMM
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