Characterizing SEU Cross Sections of 12-and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons

Kazusa Takami, Yuibi Gomi,Shin-ichiro Abe,Wang Liao,Seiya Manabe,Tetsuro Matsumoto,Masanori Hashimoto

IRPS（2023）

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摘要

This paper studies the characteristics of the single event upset (SEU) cross sections in 12- and 28-nm SRAMs induced by low-energy neutrons. Experimental results show that the SEU event cross sections of the 12-nm FinFET SRAM and 28-nm planar SRAM drop less significantly from 14.8 MeV to 6.0 MeV compared with 65-nm SRAM. This result shows that the importance of neutrons below 10 MeV elevates for terrestrial SER estimation for advanced SRAMs.

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关键词

advanced SRAMs,electron volt energy 6.0 MeV to 14.8 MeV,FinFET SRAM,low-energy neutrons,planar SRAM drop,SEU cross sections,SEU event cross sections,size 12 nm,size 28 nm,size 65 nm

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