Ultrahigh-speed silicon-based modulators/photodetectors for optical interconnects.

Xiao Hu,Dingyi Wu,Hongguang Zhang,Daigao Chen,Lei Wang,Xi Xiao,Shaohua Yu

OFC（2023）

引用 2|浏览10

暂无评分

摘要

We present our recent progress on the silicon photonic devices for next-generation optical interconnects. The 300 Gbit/s silicon microring modulator, 200 Gbit/s Ge EAM and 408 Gbit/s Ge-Si photodetector with the highest bandwidth of 110 GHz are presented. Single-chip 1.6 Tbit/s silicon-based optical transceiver is also demonstrated.

查看译文

关键词

bit rate 1.6 Tbit/s,bit rate 200 Gbit/s,bit rate 408 Gbit/s,EAM,frequency 110.0 GHz,Ge-Si/int,Ge/int,next-generation optical interconnects,photodetector,Si/int,silicon microring modulator,silicon photonic devices,silicon-based optical transceiver

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要