280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz

Xiao Hu,Dingyi Wu,Daigao Chen,Ye Liu,Hongguang Zhang,Yang Liu,Jia Liu,Min Liu, Lu Xu,Lei Wang,Xi Xiao,Shaohua Yu

OFC（2023）

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摘要

We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.35 and 3.33 dB are experimentally obtained, respectively.

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