High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes.

Rimjhim Chaudhary,Akshay M. Arabhavi,Laurenz Kulmer,Sara Hamzeloui,Marco Eppenberger,Martin Leich,Olivier Ostinelli,Juerg Leuthold,Colombo R. Bolognesi

OFC（2023）

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摘要

We report the first power performance of Type-II GaInAsSb/InP UTC-PDs. The UTCPDs attain a zero-bias output power of -14 dBm at 100 GHz, one of the highest reported for any zero-bias photodiodes.

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关键词

frequency 100.0 GHz,high-power performance,zero-bias output power,zero-bias photodiodes

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