Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE Electron Device Letters(2023)
摘要
In this letter, we investigate the on-resistance (RON) instability in p-GaN power HEMTs induced by a positive or negative gate bias (
${V}_{\text {GB}}$
), following the application of a quasi-static initialization voltage (
${V}_{\text {GP}}$
) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both RON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both (RON) increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.
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关键词
gate-bias,p-gan
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