Reliability Lifetime Prediction of SiC IGBT Devices with Different Packaging Approaches

In this paper, the reliability lifetime of SiC IGBT devices is predicted with wire-bonded packaging and press-pack packaging approaches. Firstly, the electro-thermal-mechanical coupling models of SiC IGBT devices with different packaging approaches are established. Secondly, the steady-state and the power cycling simulation studies are carried out to analyze the difference of internal stress and weak point between the two packaging structures of SiC IGBT devices. Finally, the reliability lifetime model of SiC IGBT devices with different packaging approaches is proposed. The influences of junction temperature fluctuation, average temperature, and conduction current condition on the lifetime of SiC IGBT devices are evaluated. The results show that the SiC IGBT chip with the press-pack packaging has a higher lifetime than the wire-bonded packaging, and it is helpful for the packaging designing of ultra-high voltage SiC IGBT device in the future.