Interval time dependent wake-up effect of HfZrO ferroelectric capacitor

In this work, the wake-up effect of Hf-based ferroelectric memories has been studied as a reliability concern, and related mechanisms have been proposed. By changing different waveforms, it is found that the wake-up behavior strongly depends on the interval time, and the memory window increases faster with the shorter interval time. Moreover, this difference in wake-up rate is well elaborated by the domain pinning in the non-switching region and the diffusing back defects in the switching region.