Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications
2023 IEEE International Reliability Physics Symposium (IRPS)(2023)
摘要
The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE)
$\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$
capacitors is investigated for
$\sim 10^{10}$
cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with ~ 80% normalized switching
$2\mathrm{P}_{\mathrm{r},\text{sw}}$
for
$\mathrm{t}_{\mathrm{p}}= 1\ \mu\mathrm{s}$
compared to ~ 60% for the FE capacitor at 80 K.
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关键词
Endurance,Cryogenic,Ferroelectric,Antiferroelectric
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