Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs

MoSe 2 is a wonderful ambipolar 2D material that provides a great platform for future electronics but lacks analysis for operation under electrical stress. This work focuses on parameter drifts observed in MoSe 2 FETs due to evolution of channel as function of time and applied field during which captured stress current shows increment trends that does not saturate even after 1000 seconds of operation. I D (max) improvement of 42%, VT shifts by 380%, SS improvement by 30% and mobility increment by 33% presents unreliable scenarios in operation. This has been attributed to persistent strain in channel that manifests as improved ordering in channel that points to contact region being susceptible to performance degradation in MoSe 2 FETs.