A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

In recent years, GaN power HEMTs have been considered as the ideal choice to realize high power density and high efficiency of power conversion systems. Monolithic GaN drivers and GaN power switches is promising to further improve power density and efficiency with the minimum driver loop parasitic inductance [1], [2]. The overcurrent protection (OCP) of GaN power devices is crucial to improve reliability of power systems.