Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor

Fenning Liu,Yue Peng,Wenwu Xiao,Yan Liu,Xiao Yu,Genquan Han

SCIENCE CHINA-INFORMATION SCIENCES（2023）

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摘要

Doped-HfO 2 ferroelectrics have attracted tremendous research interest for non-volatile memory and memory-incomputing applications due to their CMOS compatibility,advantages of non-destructive reading,and low power consumption [1,2]. Recently,

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