Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates (vol 3, pg 3835, 2021)

Florian Pantle,Fabian Becker,Max Kraut,Simon Woerle,Theresa Hoffmann,Sabrina Artmeier,Martin Stutzmann

NANOSCALE ADVANCES（2023）

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Correction for 'Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates' by Florian Pantle et al., Nanoscale Adv., 2021, 3, 3835-3845, https://doi.org/10.1039/D1NA00221J.

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