High-Responsivity Ti3C2 T-x/SiC Nano-Cone Holes UV van der Waals Schottky Photodiode by Maskless Etching

Herein, we firstly developed an inductively coupled plasma (ICP) markless etching technique to produce SiC nano-cone holes array (NCHs). A novel Ti3C(2)Tx/SiC NCHs van der Waals (vdW) Schottky photodiode with large area was then fabricated by using Ti3C(2)Tx MXene and pulsed laser deposited Ti3AlC(2) thin film as Schottky and ohmic contact electrodes v ia a facial spin-coating process, respectively. The device exhibits a barrier height of 1.46 eV and an excellent UV photoresponse with a peak responsivity as high as 327.5 mA/W under 254 nm at bias voltage of -1 V, corresponding to an external quantum efficiency (EQE) of 160%, which are larger than most of previous SiC-based UV photodiodes. The light trapping of the SiC NCHs can be attributed to the high responsivity of the vdW photodiode.