Design of trench Schottky barrier diode on diamond for obtaining high performance

In this paper, we systematically investigated the influence of structure parameters on the performance of dia-mond trench MIS barrier-controlled Schottky (TMBS) diode by using Silvaco simulation. It demonstrates that the charge-coupling effect introduced by a proper dielectric thickness helps to uniform the electric field in dielectric and diamond simultaneously. In addition, a relatively large (small) mesa width (etching depth) is beneficial to balance the breakdown voltage and on-resistance, resulting in a high BFOM value. Furthermore, the effect of dielectric constant on the electrical properties is also evaluated. Those results may provide a guide for engi-neering of diamond TMBS diode.