Demonstration of high on/off ratio and linearity of SnO2-quantum-dot-based synaptic device

In this letter, the analog resistive switching characteristics of a tin oxide (SnO2) quantum dot (QD) synaptic device were investigated. A SnO2-QD thin film was spin-coated on a substrate, and a Ti/Pt/SnO2-QDs/Pd sandwich structure was fabricated. The analog resistive switching characteristics of the device were remarkable; it exhibited fast operation, reliability, and linear increase and decrease in synaptic weight. The synaptic device showed a high on/off ratio of approximately 103 and improved long-term depression and long-term potentiation nonlinearities of 0.68% and 0.63%, respectively.