Fast Switching NO₂-Doped p-Channel Diamond MOSFETs

This letter demonstrates the fast-switching characteristics of a normally-on NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET). A very fast-switching operation was realized for a diamond MOSFET with a turn-on ( $\text{t}_{\text {on}}{)}$ and turn-off ( $\text{t}_{\text {off}}{)}$ time of as low as 9.97 and 9.63 ns, respectively. The parasitic parameters that influence the switching time and switching loss were measured as input capacitance, $\text{C}_{\text {iss}}$ of 245 nF/mm, output capacitance, $\text{C}_{\text {oss}}$ of 732 pF/mm, and reverse capacitance, $\text{C}_{\text {rss}}$ of 17 pF/mm. A total switching energy loss was determined to be only 208 pJ. This report suggests the potential of NO2-doped diamond MOSFETs for prospective high-speed switching applications.