Sn and Ge Complexes with Redox-Active Ligands as Efficient Interfacial Membrane-like Buffer Layers for p-i-n Perovskite Solar Cells.

Inverted perovskite solar cells with a p-i-n configuration have attracted considerable attention from the research community because of their simple design, insignificant hysteresis, improved operational stability, and low-temperature fabrication technology. However, this type of device is still lagging behind the classical n-i-p perovskite solar cells in terms of its power conversion efficiency. The performance of p-i-n perovskite solar cells can be increased using appropriate charge transport and buffer interlayers inserted between the main electron transport layer and top metal electrode. In this study, we addressed this challenge by designing a series of tin and germanium coordination complexes with redox-active ligands as promising interlayers for perovskite solar cells. The obtained compounds were characterized by X-ray single-crystal diffraction and/or NMR spectroscopy, and their optical and electrochemical properties were thoroughly studied. The efficiency of perovskite solar cells was improved from a reference value of 16.4% to 18.0-18.6%, using optimized interlayers of the tin complexes with salicylimine (1) or 2,3-dihydroxynaphthalene (2) ligands, and the germanium complex with the 2,3-dihydroxyphenazine ligand (4). The IR s-SNOM mapping revealed that the best-performing interlayers form uniform and pinhole-free coatings atop the PCBM electron-transport layer, which improves the charge extraction to the top metal electrode. The obtained results feature the potential of using tin and germanium complexes as prospective materials for improving the performance of perovskite solar cells.