Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors

Transistors realized on multilayers of 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large, gate-tunable low-temperature magnetoconductance, due to changes in magnetic state induced by the applied magnetic field. The microscopic mechanism coupling the conductance to the magnetic state is however not understood. We identify this mechanism by analyzing the evolution with temperature and magnetic field of the parameters determining the transistor behavior, the carrier mobility and threshold voltage. We find that for temperatures $T$ close to the n\'eel temperature $T_N$, the magnetoconductance originates from the increase in mobility due to cooling or the applied magnetic field, which reduce disorder originating from spin fluctuations. For $T<更多