Atomic Resolution Interface Structure and Vertical Current Injection in Highly Uniform Mos2 Heterojunctions with Bulk Gan

•Highly uniform MoS2 heterojunctions with low-dislocation density bulk GaN have been fabricated by a two-steps CVD growth.•Atomic resolution electron microscopy of the MoS2/GaN interface revealed a nearly ideal van der Waals junction•Raman mapping showed very low strain and a significant p-type doping of the MoS2 film.•Local I-V analyses on the MoS2/n-GaN heterojunction showed a rectifying behavior, with an onset voltage Von=1.7 V.