Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
IEEE Transactions on Electron Devices(2023)
摘要
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1-
$\mu \text{m}$
-thick drift layer, a low ON-resistance below 0.05
$\text{m}\Omega \cdot $
cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.
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关键词
Fin field effect transistor (FinFET),gallium nitride (GaN),quasi-vertical,silicon carbide (SiC)
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