A TCAD-Based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
Lateral silicon germanium heterojunction bipolar transistor (SiGe HBT),MOS effect,silicon-oninsulator (SOI) devices,substrate bias,THz performance
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要