Performance Improvement by SiO₂ Hardmask in 100-Nm InP-Based HEMTs for TMIC Applications
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
Key words
Benzocyclobutene (BCB) passivation,cut-off frequency (f(T)),high-electron-mobility transistor (HEMT),indium phosphide,maximum oscillation frequency (f(max)),silicon nitride (SiNx),SiO(2 )hard mask
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