Regulating the Electrical and Mechanical Properties of TaS 2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding

Highlights A flexible freestanding TaS 2 film (thickness = 3.1 μm) exhibits an ultralow void ratio of 6.01%, an ultra-high electrical conductivity of 2,666 S cm −1 , an electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, an absolute EMI SE (SSE/t) of 27,859 dB cm 2 g −1 , and excellent flexibility withstand 1,000 bends without rupture. The TaS 2 composite films exhibit excellent EMI shielding properties and higher tensile strength with better mechanical flexibility, making them suitable for EMI shielding practical applications.